junction capacitance中文什么意思

發(fā)音:

用"junction capacitance"造句

結(jié)電容(半導(dǎo)體二極管或三極管)

junction: n. 1.接合，連接，連絡(luò)。 2.接合點，交叉點，(河流 ...
capacitance: n. 【電學(xué)】電容；電容器。
collector junction capacitance: 集電極結(jié)電容
junction: n. 1.接合，連接，連絡(luò)。 2.接合點，交叉點，(河流的)匯合處，(鐵道的)聯(lián)軌點。 3.【電學(xué)】中繼線。 4.【物理學(xué)】接頭，結(jié)。 We effected a junction of our two armies. 我們使自己的兩支軍隊會師了。 make a junction 取得聯(lián)絡(luò)，連接起來。
t junction: t型連接; t形接合器; t字路口

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例句與用法

Measuring methods of photocell - junction capacitance
光電池測量方法結(jié)電容
Furthermore , the parameters related to junction capacitance were extracted in this paper . 3
此外，論文中還提取了bsim3模型交流參數(shù)中的結(jié)電容相關(guān)參數(shù)。
The auxiliary switch conducts when the two main switch turn off , and it also operates at zcs conditions . this switch not only helps the main switches achieve zvs , furthermore , it eliminates the oscillation between the transformer leakage inductance and the junction capacitance of two switches
輔助開關(guān)管為主開關(guān)管實現(xiàn)zvs創(chuàng)造了條件,同時輔助開關(guān)管在主開關(guān)管關(guān)閉期間實現(xiàn)zcs導(dǎo)通,大大減輕了變壓器漏感和主開關(guān)管結(jié)電容之間的振蕩。
A lcc multi - resonant ( mr ) network is added to the traditional three - level converters to realize zvs . the unique arrangement of a multi - resonant network results in absorption of all major parasitic components hi the resonant circuit , such as transistor output capacitance , diode junction capacitance and transformer leakage inductance , which can eliminate parasitic oscillation in the converter
它的優(yōu)點在于諧振電容吸收了開關(guān)管和續(xù)流二極管的結(jié)電容，諧振電感吸收了變壓器的漏感，使得開關(guān)管和續(xù)流二極管都能在軟開關(guān)的條件下完成導(dǎo)通和關(guān)斷過程，消除了電路中的寄生振蕩。
Simox soi wafers produced by ion implant processes were used in this experiment . the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures . the soi transistors have been the key devices for achieving the low voltage operation and low power consumption , because of the small junction capacitance , the small s - factor , and the small substrate bias effect
這三種模型分別是：第一，將傳統(tǒng)的mos電容結(jié)構(gòu)應(yīng)用到soi材料上來進(jìn)行c - v ， i - v測試，分析計算soi材料的重要電學(xué)性能參數(shù)；第二種，針對soi材料的特殊結(jié)構(gòu)，為了適應(yīng)生產(chǎn)線上對無損soi園片進(jìn)行電學(xué)性能測試的要求，應(yīng)用mosos結(jié)構(gòu)來對soi材料進(jìn)行電學(xué)性能表征。